A Strained Organic Field-Effect-Transistor with a Gate-Tunable Superconducting Channel

Hiroshi M. Yamamoto; Masaki Nakano; Masayuki Suda; Yoshihiro Iwasa; Masashi Kawasaki; Reizo Kato

doi:10.1038/ncomms3379

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A Strained Organic Field-Effect-Transistor with a Gate-Tunable Superconducting Channel

Hiroshi M. Yamamoto, Masaki Nakano, Masayuki Suda, Yoshihiro Iwasa, Masashi Kawasaki, Reizo Kato

arXiv:1309.0344 · DOI 10.1038/ncomms3379 · 2013-09-02 · Nature Communications

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Abstract

In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high performance computing and should be valid for electric-field-induced superconducting devices, too. However, so far, the carrier density is the sole parameter for field-induced superconducting interfaces. Here we show an active organic superconducting field-effect-transistor whose lattice is modulated by the strain from the substrate. The soft organic lattice allows tuning of the strain by a choice of the back substrate to make an induced superconducting state accessible at low temperature with a paraelectric solid gate. An active three terminal Josephson junction device thus realized is useful both in advanced computing and in elucidating a direct connection between filling-controlled and bandwidth-controlled superconducting phases in correlated materials.