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Universal features in the photoemission spectroscopy of high temperature superconductors

J. Zhao, U. Chatterjee, D. Ai, D. G. Hinks, H. Zheng, G. Gu, S. Rosenkranz, J. -P Castellan, H. Claus, M. R. Norman, M. Randeria, J. C. Campuzano

arXiv:1309.1903 · DOI 10.1073/pnas.1302932110 · 2013-09-07 · Proceedings of the National Academy of Sciences

T1experimental13 citations

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Abstract

The energy gap for electronic excitations is one of the most important characteristics of the superconducting state, as it directly refects the pairing of electrons. In the copper-oxide high temperature superconductors (HTSCs), a strongly anisotropic energy gap, which vanishes along high symmetry directions, is a clear manifestation of the d-wave symmetry of the pairing. There is, however, a dramatic change in the form of the gap anisotropy with reduced carrier concentration (underdoping). Although the vanishing of the gap along the diagonal to the square Cu-O bond directions is robust, the doping dependence of the large gap along the Cu-O directions suggests that its origin might be different from pairing. It is thus tempting to associate the large gap with a second order parameter distinct from superconductivity. We use angle-resolved photoemission spectroscopy (ARPES) to show that the two-gap behavior, and the destruction of well defined electronic excitations, are not universal features of HTSCs, and depend sensitively on how the underdoped materials are prepared. Depending on cation substitution, underdoped samples either show two-gap behavior or not. In contrast, many other characteristics of HTSCs, such as the domelike dependence of Tc on doping, long-lived excitations along the diagonals to the Cu-O bonds, energy gap at the antinode (crossing of the underlying Fermi surface and the (pi, 0)-(pi, pi) line) decreasing monotonically with doping, while persisting above Tc (the pseudogap), are present in all samples, irrespective of whether they exhibit two-gap behavior or not. Our results imply that universal aspects of high Tc superconductivity are relatively insensitive to differences in the electronic states along the Cu-O bond directions.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Bi2Sr2CaCu2O8+δ

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91Pressure not reportedunknown
Bi2Sr2CaCu2O8+δ

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55Pressure not reportedunknown
Bi2.1Sr1.4Ca1.5Cu2O8+δ

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82Pressure not reportedunknown
Bi2.1Sr1.9Ca0.9Dy0.1Cu2O8+δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

86Pressure not reportedunknown
Bi2.1Sr1.9Ca0.9Dy0.1Cu2O8+δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

38Pressure not reportedunknown
Bi2.1Sr1.9Ca0.7Dy0.3Cu2O8+δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

66Pressure not reportedunknown
Bi2Sr2CaCu2O8+δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown
Bi2Sr2CuO6+δ

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—Pressure not reportedunknown
La2-xSrxCuO4

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—Pressure not reportedunknown

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