Nonlinear current-voltage characteristics due to quantum tunneling of phase slips in superconducting Nb nanowire networks
M. Trezza, C. Cirillo, P. Sabatino, G. Carapella, S. L. Prischepa, C. Attanasio
arXiv:1312.1599 · DOI 10.1063/1.4851240 · 2013-12-05 · Applied Physics Letters
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Abstract
We report on the transport properties of an array of N about 30 interconnected Nb nanowires, grown by sputtering on robust porous Si substrates. The analyzed system exhibits a broad resistive transition in zero magnetic field, H, and highly nonlinear V(I) characteristics as a function of H which can be both consistently described by quantum tunneling of phase slips.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.67 | Pressure unresolved | midpoint |
| Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.52 | Pressure unresolved | unknown |
| Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.64 | Pressure unresolved | unknown |
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