Electron-Phonon Coupling on the NbSi Transition Edge Sensors

Shu-chen Liu; Stefanos Marnieros; Louis Dumoulin; Youri Dolgorouki; Laurent Berge; Sophie Collin

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Electron-Phonon Coupling on the NbSi Transition Edge Sensors

Shu-chen Liu, Stefanos Marnieros, Louis Dumoulin, Youri Dolgorouki, Laurent Berge, Sophie Collin

arXiv:1402.3672 · 2014-02-15 · arXiv: Instrumentation and Methods for Astrophysics

T1theoretical

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Abstract

We have built an electron-phonon coupling model to describe the behavior of the NbxSi1-x transition edge sensor (TES) bolometers, fabricated by electron-beam coevaporation and photolithography techniques on a 2-inch silicon wafer. The resistance versus temperature curves of several sensors with different thickness are measured with different bias currents, ranging from 200 nA to 10 micro A, and the electron-phonon coupling coefficient and the electron-phonon thermal conductance are calculated herein. Our values are quite comparable with those in metallic TES samples of other groups using different measurement methods, while we are using the transition region of our TES sample to calculate the electron-phonon coupling interaction.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Nb0.14Si0.86 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	0.075	Pressure not reported	unknown
Nb0.14Si0.86 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	0.11	Pressure not reported	unknown