A site-selective antiferromagnetic ground state in layered pnictide-oxide BaTi2As2O

Xiang-Long Yu; Da-Yong Liu; Ya-Min Quan; Ting Jia; Hai-Qing Lin; Liang-Jian Zou

doi:10.1063/1.4866701

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A site-selective antiferromagnetic ground state in layered pnictide-oxide BaTi2As2O

Xiang-Long Yu, Da-Yong Liu, Ya-Min Quan, Ting Jia, Hai-Qing Lin, Liang-Jian Zou

arXiv:1402.4723 · DOI 10.1063/1.4866701 · 2014-02-19 · Journal of Applied Physics

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Abstract

The electronic and magnetic properties of BaTi$_{2}$As$_{2}$O have been investigated using both the first-principles and analytical methods. The full-potential linearized augmented plane-wave calculations show that the most stable state is a site-selective antiferromagnetic (AFM) metal with a $\text{2}\times \text{1}\times \text{1}$ magnetic unit cell containing two nonmagnetic Ti atoms and two other Ti atoms with antiparallel moments. Further analysis to Fermi surface and spin susceptibility shows that the site-selective AFM ground state is driven by the Fermi surface nesting and the Coulomb correlation. Meanwhile, the charge density distribution remains uniform, suggesting that the phase transition at $200$ K in experiment is a spin-density-wave (SDW) transition.