Preparation of hybrid Josephson junctions on Co-doped Ba-122 single crystals
D. Reifert, N. Hasan, S. Doering, S. Schmidt, M. Monecke, M. Feltz, F. Schmidl, V. Tympel, W. Wisniewski, I. Moench, T. Wolf, P. Seidel
arXiv:1403.6152 · DOI 10.1088/0953-2048/27/8/085003 · 2014-03-24 · Superconductor Science and Technology
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Abstract
In this paper we present a method for processing a hybrid Josephson junction on Co-doped BaFe2As2(Ba-122) single crystals with a thin film Pb-counter electrode and a barrier layer of TiOx. This includes the leveling and polishing of the crystals and structuring them with thin film techniques such as photo lithography, sputtering and ion beam etching (IBE). The junctions show hysteretical resistively and capacitively shunted junction (RCSJ)-like I-V characteristics with an IcRn-product of about 800uV.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Ba(Fe1-xCox)2As2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 23.5 | Pressure not reported | unknown |
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