Enhanced superconductivity in F-doped LaO1-xFxBiSSe

Xiao-Chuan Wang; Dong-Yun Chen; Qi Guo; Jia Yu; Bin-Bin Ruan; Qing-Ge Mu; Gen-Fu Chen; Zhi-An Ren

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Enhanced superconductivity in F-doped LaO1-xFxBiSSe

Xiao-Chuan Wang, Dong-Yun Chen, Qi Guo, Jia Yu, Bin-Bin Ruan, Qing-Ge Mu, Gen-Fu Chen, Zhi-An Ren

arXiv:1404.7562 · 2014-04-30 · arXiv: Superconductivity

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Abstract

The layered compound LaOBiSSe was successfully synthesized by a two-step solid-state reaction method, which is isostructural with the quaternary compound LaOBiS2 indicated by the powder X-ray diffraction characterization, and the crystal lattice parameters are slightly expanded by the substitution of Se atoms. Electrical transport measurement shows that LaOBiSSe exhibits semiconducting behavior similar with the parent compound LaOBiS2, while by F-doping the samples can be much more easily turned to be metallic and superconducting at low temperature with a small amount of F. Under the optimal carrier doping concentration of F ~ 0.5, the superconducting critical temperature of LaO0.5F0.5BiSSe is clearly enhanced up to a value of 3.8 K than the 3.2 K of LaO0.5F0.5BiS2.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
LaO0.5F0.5BiSSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	3.8	Pressure not reported	unknown
LaO0.5F0.5BiS2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	3.2	Pressure not reported	unknown