Gate-controlled supercurrent reversal in MoS$_2$-based Josephson junctions

Babak Zare Rameshti; Ali G. Moghaddam; Malek Zareyan

doi:10.1209/0295-5075/108/37002

← Back to search

Gate-controlled supercurrent reversal in MoS$_2$-based Josephson junctions

Babak Zare Rameshti, Ali G. Moghaddam, Malek Zareyan

arXiv:1406.6801 · DOI 10.1209/0295-5075/108/37002 · 2014-06-26

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

Motivated by recent experiments revealing superconductivity in MoS$_2$, we investigate the Josephson effect in the monolayer MoS$_2$ at the presence of an exchange splitting. We show that the supercurrent reversal known as $0-π$ transition can occur by varying the doping via gate voltages. This is in contrast to common superconductor/ferromagnet/superconductor junctions in which successive $0-π$ transition take place with the variation of junction length or temperature. In fact for the case of MoS$_2$ we find that both the amplitude and the period of oscillations show a dependence on the doping which explains the predicted doping induced supercurrent reversal. These effects comes from the dependence of density and Fermi velocity on the doping strength beside the intrinsic spin splitting in the valence band which originates from spin-orbit interaction.