On the low-field Hall coefficient of graphite

P. Esquinazi; J. Krüger; J. Barzola-Quiquia; R. Schönemann; T. Herrmannsdörfer; N. García

doi:10.1063/1.4902099

← Back to search

On the low-field Hall coefficient of graphite

P. Esquinazi, J. Krüger, J. Barzola-Quiquia, R. Schönemann, T. Herrmannsdörfer, N. García

arXiv:1407.7458 · DOI 10.1063/1.4902099 · 2014-07-28 · AIP Advances

T315 citations

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

We have measured the temperature and magnetic field dependence of the Hall coefficient ($R_{\rm H}$) in three, several micrometer long multigraphene samples of thickness between $\sim 9~$to $\sim 30$~nm in the temperature range 0.1 to 200~K and up to 0.2~T field. The temperature dependence of the longitudinal resistance of two of the samples indicates the contribution from embedded interfaces running parallel to the graphene layers. At low enough temperatures and fields $R_{\rm H}$ is positive in all samples, showing a crossover to negative values at high enough fields and/or temperatures in samples with interfaces contribution. The overall results are compatible with the reported superconducting behavior of embedded interfaces in the graphite structure and indicate that the negative low magnetic field Hall coefficient is not intrinsic of the ideal graphite structure.