Sr$_{0.9}$K$_{0.1}$Zn$_{1.8}$Mn$_{0.2}$As$_{2}$: a ferromagnetic semiconductor with colossal magnetoresistance

Xiaojun Yang; Qian Chen; Yupeng Li; Zhen Wang; Jinke Bao; Yuke Li; Qian Tao; Guanghan Cao; Zhu-An Xu

doi:10.1209/0295-5075/107/67007

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Sr$_{0.9}$K$_{0.1}$Zn$_{1.8}$Mn$_{0.2}$As$_{2}$: a ferromagnetic semiconductor with colossal magnetoresistance

Xiaojun Yang, Qian Chen, Yupeng Li, Zhen Wang, Jinke Bao, Yuke Li, Qian Tao, Guanghan Cao, Zhu-An Xu

arXiv:1409.2743 · DOI 10.1209/0295-5075/107/67007 · 2014-09-09 · Europhysics Letters

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Abstract

A bulk diluted magnetic semiconductor (Sr,K)(Zn,Mn)$_{2}$As$_{2}$ was synthesized with decoupled charge and spin doping. It has a hexagonal CaAl$_{2}$Si$_{2}$-type structure with the (Zn,Mn)$_{2}$As$_{2}$ layer forming a honeycomb-like network. Magnetization measurements show that the sample undergoes a ferromagnetic transition with a Curie temperature of 12 K and \revision{magnetic moment reaches about 1.5 $μ_{B}$/Mn under $μ_0H$ = 5 T and $T$ = 2 K}. Surprisingly, a colossal negative magnetoresistance, defined as $[ρ(H)-ρ(0)]/ρ(0)$, up to $-$38\% under a low field of $μ_0H$ = 0.1 T and to $-$99.8\% under $μ_0H$ = 5 T, was observed at $T$ = 2 K. The colossal magnetoresistance can be explained based on the Anderson localization theory.