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Temperature and field dependence of the intrinsic tunnelling structure in overdoped Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$

T. M. Benseman, J. R. Cooper, G. Balakrishnan

arXiv:1503.00335 · DOI 10.1103/PhysRevB.98.014507 · 2015-03-01 · Physical Review B

T1theoretical5 citations

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Abstract

We report intrinsic tunnelling data for mesa structures fabricated on three over- and optimally-doped $\rm{Bi_{2.15}Sr_{1.85}CaCu_{2}O_{8+δ}}$ crystals with transition temperatures of 86-78~K and 0.16-0.19~holes per CuO$_2$ unit, for a wide range of temperature ($T$) and applied magnetic field ($H$), primarily focusing on one over-doped crystal(OD80). The differential conductance above the gap edge shows clear dip structure which is highly suggestive of strong coupling to a narrow boson mode. Data below the gap edge suggest that tunnelling is weaker near the nodes of the d-wave gap and give clear evidence for strong $T$-dependent pair breaking. These findings could help theorists make a detailed Eliashberg analysis and thereby contribute towards understanding the pairing mechanism. We show that for our OD80 crystal the gap above $T_c$ although large, is reasonably consistent with the theory of superconducting fluctuations.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Bi2.15Sr1.85CaCu2O8+δ

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78Pressure not reportedunknown
Bi2.15Sr1.85CaCu2O8+δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

86Pressure not reportedunknown

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