Effect of high oxygen pressure annealing on superconducting Nd1.85Ce0.15CuO4 thin films by pulsed laser deposition from Cu-enriched targets
M. Hoek, F. Coneri, D. P. Leusink, P. D. Eerkes, X. Renshaw Wang, H. Hilgenkamp
arXiv:1507.06613 · 2015-07-23
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Abstract
We show that the quality of Nd1.85Ce0.15CuO4 films grown by pulsed laser deposition can be enhanced by using a non-stoichiometric target with extra copper added to suppress the formation of a parasitic (Nd, Ce)2O3 phase. The properties of these films are less dependent on the exact annealing procedure after deposition as compared to films grown from a stoichiometric target. Film growth can be followed by a 1 bar oxygen annealing, after an initial vacuum annealing, while retaining the superconducting properties and quality. This enables the integration of electron-doped cuprates with their hole-doped counterparts on a single chip, to create, for example, superconducting pn-junctions.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nd1.85Ce0.15CuO4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 16.7 | Pressure unresolved | zero_resistance |
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