Tunable Fe-vacancy disorder-order transition in FeSe thin films

Y. Fang; D. H. Xie; W. Zhang; F. Chen; W. Feng; B. P. Xie; D. L. Feng; X. C. Lai; S. Y. Tan

doi:10.1103/PhysRevB.93.184503

← Back to search

Tunable Fe-vacancy disorder-order transition in FeSe thin films

Y. Fang, D. H. Xie, W. Zhang, F. Chen, W. Feng, B. P. Xie, D. L. Feng, X. C. Lai, S. Y. Tan

arXiv:1511.05418 · DOI 10.1103/PhysRevB.93.184503 · 2015-11-17 · Physical Review B

T311 citations

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

Various Fe-vacancy orders have been reported in tetragonal Fe1-xSe single crystals and nanowires/nanosheets, which are similar to those found in alkali metal intercalated A1-xFe2-ySe2 superconductors. Here we report the in-situ angle-resolved photoemission spectroscopy study of Fe-vacancy disordered and ordered phases in FeSe multi-layer thin films grown by molecular beam epitaxy. Low temperature annealed FeSe films are identified to be Fe-vacancy disordered phase and electron doped. Further long-time low temperature anneal can change the Fe-vacancy disordered phase to ordered phase, which is found to be semiconductor/insulator with (root 5) x (root 5) superstructure and can be reversely changed to disordered phase with high temperature anneal. Our results reveal that the disorder-order transition in FeSe thin films can be simply tuned by vacuum anneal and the (root 5) x (root 5) Fe-vacancy ordered phase is more likely the parent phase of FeSe.