Experimental evidence for hotspot and phase-slip mechanisms of voltage switching in ultra-thin YBa2Cu3O7-x nanowires
M. Lyatti, M. A. Wolff, A. Savenko, M. Kruth, S. Ferrari, U. Poppe, W. Pernice, R. E. Dunin-Borkowski, C. Schuck
arXiv:1603.03459 · DOI 10.1103/PhysRevB.98.054505 · 2016-03-10 · Physical Review B
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Abstract
We have fabricated ultra-thin YBa2Cu3O7-x nanowires with a high critical current density and studied their voltage switching behavior in the 4.2 - 90 K temperature range. A comparison of our experimental data with theoretical models indicates that, depending on the temperature and nanowire cross section, voltage switching originates from two different mechanisms: hotspot-assisted suppression of the edge barrier by the transport current and the appearance of phase-slip lines in the nanowire. Our observation of hotspot-assisted voltage switching is in good quantitative agreement with predictions based on the Aslamazov-Larkin model for an edge barrier in a wide superconducting bridge.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| YBa2Cu3O7-x Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | — |
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