← Back to search

Synthesis, characterization and physical properties of layered bismuthide PtBi$_2$

C. Q. Xu, X. Z. Xing, Xiaofeng Xu, L. Q. Che, Bin Chen, Xin Lu, Jianhui Dai, Z. X. Shi

arXiv:1605.08956 · DOI 10.1103/PhysRevB.94.165119 · 2016-05-29 · Physical Review B

T1experimental15 citations

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

We report details of single crystal growth of stoichiometric bismuthide PtBi$_2$ whose structure consists of alternate stacking of Pt layer sandwiched by Bi bilayer along the $c$-axis. The compound crystallizes in space group P-3 with a hexagonal unit cell of $a$=$b$=6.553$Å$, $c$=6.165$Å$. The magnetization data show opposite sign for fields parallel and perpendicular to the Pt layers, respectively. The $T$-dependent resistivity is typical of a metal and the magnetic response shows clear two types of charge carriers and the validity of the semi-classical Kohler's rule. Its physical properties was discussed in comparison with recently proposed topological superconductor $β$-PdBi$_2$.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
PtBi2

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

0.15Pressure not reportedunknown
PdBi2

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

6Pressure not reportedunknown
β-PdBi2

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

5Pressure not reportedunknown
PtBi

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

1Pressure not reportedunknown

Similar papers