Disentangling the surface and bulk electronic structures of LaOFeAs
P. Zhang, J. Ma, T. Qian, Y. G. Shi, A. V. Fedorov, J. D. Denlinger, X. X. Wu, J. P. Hu, P. Richard, H. Ding
arXiv:1606.01033 · DOI 10.1103/PhysRevB.94.104517 · 2016-06-03 · Physical Review B
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Abstract
We performed a comprehensive angle-resolved photoemission spectroscopy study of the electronic band structure of LaOFeAs single crystals. We found that samples cleaved at low temperature show an unstable and highly complicated band structure, whereas samples cleaved at high temperature exhibit a stable and clearer electronic structure. Using \emph{in-situ} surface doping with K and supported by first-principles calculations, we identify both surface and bulk bands. Our assignments are confirmed by the difference in the temperature dependence of the bulk and surface states.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| LaOFeP Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 5 | Pressure unresolved | unknown |
| LaOFeAs Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 26 | Pressure unresolved | unknown |
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