Proximity Effect Transfer from NbTi into a Semiconductor Heterostructure via Epitaxial Aluminum

Drachmann, A. C. C.; Suominen, H. J.; Kjaergaard, M.; Shojaei, B.; Palmstrøm, C. J.; Marcus, C. M.; Nichele, F.

doi:10.1021/acs.nanolett.6b04964

← Back to search

Proximity Effect Transfer from NbTi into a Semiconductor Heterostructure via Epitaxial Aluminum

Drachmann, A. C. C., Suominen, H. J., Kjaergaard, M., Shojaei, B., Palmstrøm, C. J., Marcus, C. M., Nichele, F.

arXiv:1611.10166 · DOI 10.1021/acs.nanolett.6b04964 · 2017-02-14

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

We demonstrate the transfer of the superconducting properties of NbTi---a large-gap high-critical-field superconductor---into an InAs heterostructure via a thin intermediate layer of epitaxial Al. Two device geometries, a Josephson junction and a gate-defined quantum point contact, are used to characterize interface transparency and the two-step proximity effect. In the Josephson junction, multiple Andreev reflection reveal near-unity transparency, with an induced gap $Δ^*=0.50~\mathrm{meV}$ and a critical temperature of $7.8~\mathrm{K}$. Tunneling spectroscopy yields a hard induced gap in the InAs adjacent to the superconductor of $Δ^*=0.43~\mathrm{meV}$ with substructure characteristic of both Al and NbTi.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
NbTi Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	7.7	Pressure not reported	onset