Direct imaging of electron transfer and its influence on superconducting pairing at FeSe/SrTiO3 interface
Weiwei Zhao, Mingda Li, Cui-Zu Chang, Jue Jiang, Lijun Wu, Chaoxing Liu, Yimei Zhu, Jagadeesh S. Moodera, Moses H. W. Chan
arXiv:1701.03678 · DOI 10.1126/sciadv.aao2682 · 2017-01-13 · Science Advances
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Abstract
The exact mechanism responsible for the tenfold enhancement of superconducting transition temperature (Tc) in a monolayer iron selenide (FeSe) on SrTiO3(STO) substrate over that of bulk FeSe, is an open issue. We present here a coordinated study of electrical transport and low temperature electron energy-loss spectroscopy (EELS) measurements on FeSe/STO films of various thicknesses. Our EELS mapping across the FeSe/STO interface shows direct evidence of band-bending caused by electrons transferred from STO to FeSe layer. The transferred electrons were found to accumulate only within the first two atomic layers of FeSe films near the STO substrate. Our transport results found a positive backgate applied from STO is particularly effective in enhancing Tc of the films while minimally changing the carrier density. We suggest that the positive backgate tends to 'pull' the transferred electrons in FeSe films closer to the interface and thus further enhances both their coupling to interfacial phonons and the electron-electron interaction within FeSe films, thus leading to a huge enhancement of Tc in FeSe films.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| FeSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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