A self-aligned nano-fabrication process for vertical NbN-MgO-NbN Josephson junctions

A. Grimm; S. Jebari; D. Hazra; F. Blanchet; F. Gustavo; J. -L. Thomassin; M. Hofheinz

doi:10.1088/1361-6668/aa8007

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A self-aligned nano-fabrication process for vertical NbN-MgO-NbN Josephson junctions

A. Grimm, S. Jebari, D. Hazra, F. Blanchet, F. Gustavo, J. -L. Thomassin, M. Hofheinz

arXiv:1705.05608 · DOI 10.1088/1361-6668/aa8007 · 2017-05-16 · Superconductor Science and Technology

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Abstract

We present a new process for fabricating vertical NbN-MgO-NbN Josephson junctions using self-aligned silicon nitride spacers. It allows for a wide range of junction areas from 0.02 um^2 to several 100 um^2. At the same time, it is suited for the implementation of complex microwave circuits with transmission line impedances ranging from < 1 Ohm to > 1 kOhm. The constituent thin films and the finished junctions are characterized. The latter are shown to have high gap voltages (> 4 mV) and low sub-gap leakage currents.