Superconductivity in La1-xCexOBiSSe: carrier doping by mixed valence of Ce ions
Ryota Sogabe, Yosuke Goto, A. Nishida, Takayoshi Katase, Yoshikazu Mizuguchi
arXiv:1709.00892 · DOI 10.1209/0295-5075/122/17004 · 2017-09-04 · Europhysics Letters
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Abstract
We report the effects of Ce substitution on structural, electronic, and magnetic properties of layered bismuth-chalcogenide La1-xCexOBiSSe (x = 0-0.9), which are newly obtained in this study. Metallic conductivity was observed for x > 0.1 because of electron carriers induced by mixed valence of Ce ions, as revealed by bond valence sum calculation and magnetization measurements. Zero resistivity and clear diamagnetic susceptibility were obtained for x = 0.2-0.6, indicating the emergence of bulk superconductivity in these compounds. Dome-shaped superconductivity phase diagram with the highest transition temperature (Tc) of 3.1 K, which is slightly lower than that of F-doped LaOBiSSe (Tc = 3.7 K), was established. The present study clearly shows that the mixed valence of Ce ions can be utilized as an alternative approach for electron-doping in layered bismuth-chalcogenides to induce superconductivity.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| La1-xCexOBiSSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.1 | Pressure not reported | zero_resistance |
| La1-xCexOBiSSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.1 | Pressure not reported | unknown |
| LaOBiSSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.7 | Pressure not reported | unknown |
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