Observation of tunneling gap in epitaxial ultrathin films of pyrite-type copper disulfide
Chong Liu, Haohao Yang, Can-Li Song, Wei Li, Ke He, Xu-Cun Ma, Lili Wang, Qi-Kun Xue
arXiv:1801.09342 · DOI 10.1088/0256-307X/35/2/027303 · 2018-01-29 · arXiv: Superconductivity
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Abstract
We report scanning tunneling microscopy investigation on epitaxial ultrathin films of pyrite-type copper disulfide. Layer by layer growth of CuS2 films with a preferential orientation of (111) on SrTiO3(001) and Bi2Sr2CaCu2O8+δ substrates is achieved by molecular beam epitaxy growth. For ultrathin films on both kinds of substrates, we observed symmetric tunneling gap around Fermi level that persists up to ~ 15 K. The tunneling gap degrades with either increasing temperature or increasing thickness, suggesting new matter states at the extreme two dimensional limit.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| CuS2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 15 | Pressure not reported | unknown |
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