Selective Area Grown Semiconductor-Superconductor Hybrids: A Basis for Topological Networks
S. Vaitiekėnas, A. M. Whiticar, M. T. Deng, F. Krizek, J. E. Sestoft, C. J. Palmstrøm, S. Marti-Sanchez, J. Arbiol, P. Krogstrup, L. Casparis, C. M. Marcus
arXiv:1802.04210 · DOI 10.1103/PhysRevLett.121.147701 · 2018-02-12 · Physical review letters
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Abstract
We introduce selective area grown hybrid InAs/Al nanowires based on molecular beam epitaxy, allowing arbitrary semiconductor-superconductor networks containing loops and branches. Transport reveals a hard induced gap and unpoisoned 2e-periodic Coulomb blockade, with temperature dependent 1e features in agreement with theory. Coulomb peak spacing in parallel magnetic field displays overshoot, indicating an oscillating discrete near-zero subgap state consistent with device length. Finally, we investigate a loop network, finding strong spin-orbit coupling and a coherence length of several microns. These results demonstrate the potential of this platform for scalable topological networks among other applications.
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