Observation of Interface Superconductivity in a SnSe2-Epitaxial Graphene van der Waals Heterostructure
Yi-Min Zhang, Jia-Qi Fan, Wen-Lin Wang, Ding Zhang, Lili Wang, Wei Li, Ke He, Can-Li Song, Xu-Cun Ma, Qi-Kun Xue
arXiv:1802.08434 · 2018-02-23
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Abstract
We report on the direct observation of interface superconductivity in single-unit-cell SnSe2 films grown on graphitized SiC(0001) substrate by means of van der Waals epitaxy. Tunneling spectrum in the superconducting state reveals rather conventional character with a fully gapped order parameter. The occurrence of superconductivity is further confirmed by the presence of vortices under external magnetic field. Through interface engineering, we unravel the mechanism of superconductivity that originates from a two-dimensional electron gas formed at the interface of SnSe2 and graphene. Our finding opens up novel strategies to hunt for and understand interface superconductivity based on van der Waals heterostructures.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| SnSe2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4.84 | Pressure not reported | onset |
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