Room temperature deposition of superconducting Niobium Nitride films by ion beam assisted sputtering
Tomas Polakovic, Sergi Lendinez, John E. Pearson, Axel Hoffmann, Volodymyr Yefremenko, Clarence L. Chang, Whitney Armstrong, John Arrington, Kawtar Hafidi, Goran Karapetrov, Valentine Novosad
arXiv:1803.02417 · DOI 10.1063/1.5031904 · 2018-03-06 · APL Materials
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Abstract
We use room temperature ion beam assisted sputtering (IBAS) to deposit niobium nitride thin films. Electrical and structural characterizations were performed by electric transport and magnetization measurements at variable temperatures, X-ray diffraction and atomic force microscopy. Compared to reactive sputtering of NbN, films sputtered in presence of an ion beam show remarkable increase in the superconducting critical temperature T$_{\rm{c}}$, while exhibiting lower sensitivity to nitrogen concentration during deposition. Thickness dependence of the superconducting critical temperature is comparable to films prepared by conventional methods at high substrate temperatures and is consistent with behavior driven by quantum size effects or weak localization.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| NbN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 14.5 | Pressure not reported | unknown |
| NbN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | — |
| NbN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | — |
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