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Electronic effect of doped oxygen atoms in Bi2201 superconductors determined by scanning tunneling microscopy

Ying Fei, Kunliang Bu, Wenhao Zhang, Yuan Zheng, Xuan Sun, Ying Ding, Xingjiang Zhou, Yi Yin

arXiv:1803.03400 · 2018-03-09

T2theoretical

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Abstract

The oxygen dopants are essential in tuning electronic properties of Bi$_2$Sr$_2$Ca$_{n-1}$Cu$_n$O$_{2n+4+δ}$ superconductors. Here we apply the technique of scanning tunneling microscopy and spectroscopy to study the influence of oxygen dopants in an optimally doped Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+δ}$ and an overdoped Bi$_{2-y}$Pb$_y$Sr$_2$CuO$_{6+δ}$. In both samples, we find that interstitial oxygen atoms on the SrO layers dominate over the other two forms of oxygen dopants, oxygen vacancies on the SrO layers and interstitial oxygen atoms on the BiO layers. The hole doping is estimated from the oxygen concentration, as compared to the result extracted from the measured Fermi surface. The precise spatial location is employed to obtain a negative correlation between the oxygen dopants and the inhomogeneous pseudogap.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Bi2Sr2-xLaxCuO6+δ

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32Pressure not reportedunknown
Bi2-yPbySr2CuO6+δ

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13Pressure not reportedunknown
Bi2Sr2CaCu2O8+δ

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90Pressure not reportedunknown
Bi2Sr2CuO6+δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

32Pressure not reportedunknown

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