Majority carrier type inversion in FeSe family and "doped semimetal" scheme in iron-based superconductors

Y. A. Ovchenkov; D. A. Chareev; V. A. Kulbachinskii; V. G. Kytin; S. V. Mishkov; D. E. Presnov; O. S. Volkova; A. N. Vasiliev

doi:10.1088/1361-6668/ab1387

Majority carrier type inversion in FeSe family and "doped semimetal" scheme in iron-based superconductors

Y. A. Ovchenkov, D. A. Chareev, V. A. Kulbachinskii, V. G. Kytin, S. V. Mishkov, D. E. Presnov, O. S. Volkova, A. N. Vasiliev

arXiv:1808.03551 · DOI 10.1088/1361-6668/ab1387 · 2018-08-10 · Superconductor Science and Technology

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Abstract

The field and temperature dependencies of the longitudinal and Hall resistivity have been studied for high-quality FeSe${}_{1-x}$S${}_{x}$ (x up to 0.14) single crystals. Quasiclassical analysis of the obtained data indicates a strong variation of the electron and hole concentrations under the studied isovalent substitution and proximity of FeSe to the point of the majority carrier-type inversion. On this basis, we propose a `doped semimetal' scheme for the superconducting phase diagram of the FeSe family, which can be applied to other iron-based superconductors. In this scheme, the two local maxima of the superconducting temperature can be associated with the Van Hove singularities of a simplified semi-metallic electronic structure. The multicarrier analysis of the experimental data also reveals the presence of a tiny and highly mobile electron band for all the samples studied. Sulfur substitution in the studied range leads to a decrease in the number of mobile electrons by more than ten times, from about 3\% to about 0.2\%. This behavior may indicate a successive change of the Fermi level position relative to singular points of the electronic structure which is consistent with the `doped semimetal' scheme. The scattering time for mobile carriers does not depend on impurities, which allows us to consider this group as a possible source of unusual acoustic properties of FeSe.