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On the origin of in-gap states in homogeneously disordered ultrathin films. MoC case

V. Hašková, M. Kopčík, P. Szabó, T. Samuely, J. Kačmarčík, O. Onufriienko, M. Žemlička, P. Neilinger, M. Grajcar, P. Samuely

arXiv:1809.00849 · DOI 10.1016/j.apsusc.2018.06.228 · 2018-09-04 · Applied Surface Science

T1theoretical8 citations

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Abstract

Many disordered superconducting films exhibit smeared tunneling spectra with evident in-gap states. We demonstrated that the tunneling density of states in ultrathin MoC films is gapless and can be described by the Dynes version of the BCS density of states with a strong broadening parameter Gamma accounting for the suppression of coherence peaks and increased in-gap states. The thinner the film, the lower the Tc and the superconducting energy gap Delta and the larger the Gamma. MoC films of 3 nm thickness deposited simultaneously on silicon and sapphire substrates reveal very similar scalar disorder, evidenced by the equal sheet resistance, but exhibit different superconducting characteristics of Tc, Delta and Gamma, suggesting that pair breaking responsible for the dissipation channel and the suppression of superconductivity originates on the film-substrate interface. It indicates that sapphire is a stronger pair breaker. Interface pair breaking can be operative in other cases as well.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
MoC

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—Pressure not reportedunknown
MoC

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown

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