Thin film superconducting quantum interferometer with ultralow inductance
S. I. Bondarenko, A. V. Krevsun, E. V. Ilichev, U. Hubner, V. P. Koverya, S. I. Link
arXiv:1809.01932 · 2018-09-06
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Abstract
A simple method has been developed for manufacturing a thin film superconducting quantum interferometer (SQI) with ultralow inductance (~10^-13 H). Current-voltage and voltage-field characteristics of the SQI are presented. The basic design equations are obtained and confirmed experimentally. The SQI has been used for the first time to determine the penetration depth of a magnetic field into a film of 50% In-50% Sn alloy.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| InSn Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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