Gate-induced superconductivity in a monolayer topological insulator
Ebrahim Sajadi, Tauno Palomaki, Zaiyao Fei, Wenjin Zhao, Philip Bement, Christian Olsen, Silvia Lüscher, Xiaodong Xu, Joshua A. Folk, David H. Cobden
arXiv:1809.04691 · 2018-09-12
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Abstract
The layered semimetal WTe_2 has recently been found to be a two-dimensional topological insulator (2D TI) when thinned down to a single monolayer, with conducting helical edge channels. We report here that intrinsic superconductivity can be induced in this monolayer 2D TI by mild electrostatic doping, at temperatures below 1 K. The 2D TI-superconductor transition can be easily driven by applying a just a small gate voltage. This discovery offers new possibilities for gate-controlled devices combining superconductivity and topology, and could provide a basis for quantum information schemes based on topological protection.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| WTe2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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