Coulomb pairing of electrons in thin films with strong spin-orbit interaction
Yasha Gindikin, Vladimir A. Sablikov
arXiv:1810.05144 · DOI 10.1016/j.physe.2018.12.028 · 2018-10-11 · Physica E: Low-dimensional Systems and Nanostructures
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Abstract
In low-dimensional structures with strong Rashba spin-orbit interaction (SOI), the Coulomb fields between moving electrons produce a SOI component of the pair interaction that competes with the potential Coulomb repulsion. If the Rashba SOI constant of the material is sufficiently high, the total electron-electron interaction becomes attractive, which leads to the formation of the two-electron bound states. We show that because of the dielectric screening in a thin film the binding energy is significantly higher as compared to the case of the bulk screening.
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