← Back to search

Coulomb pairing of electrons in thin films with strong spin-orbit interaction

Yasha Gindikin, Vladimir A. Sablikov

arXiv:1810.05144 · DOI 10.1016/j.physe.2018.12.028 · 2018-10-11 · Physica E: Low-dimensional Systems and Nanostructures

T310 citations

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

In low-dimensional structures with strong Rashba spin-orbit interaction (SOI), the Coulomb fields between moving electrons produce a SOI component of the pair interaction that competes with the potential Coulomb repulsion. If the Rashba SOI constant of the material is sufficiently high, the total electron-electron interaction becomes attractive, which leads to the formation of the two-electron bound states. We show that because of the dielectric screening in a thin film the binding energy is significantly higher as compared to the case of the bulk screening.

Similar papers