Phase slip lines in superconducting few-layer NbSe$_2$ crystals
Nicola Paradiso, Anh-Tuan Nguyen, Karl Enzo Kloss, Christoph Strunk
arXiv:1811.06207 · DOI 10.1088/2053-1583/ab0bcc · 2018-11-15 · 2D Materials
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Abstract
We show the results of two-terminal and four-terminal transport measurements on few-layer NbSe$_2$ devices at large current bias. In all the samples measured, transport characteristics at high bias are dominated by a series of resistance jumps due to nucleation of phase slip lines, the two dimensional analogue of phase slip centers. In point contact devices the relatively simple and homogeneous geometry enables a quantitative comparison with the model of Skocpol, Beasley and Tinkham. In extended crystals the nucleation of a single phase slip line can be induced by mechanical stress of a region whose width is comparable to the charge imbalance equilibration length.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| NbSe2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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