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Optical Transistor for an Amplification of Radiation in a Broadband THz Domain

Kristian Hauser A. Villegas, Fedor V. Kusmartsev, Y. Luo, Ivan G. Savenko

arXiv:1812.01182 · DOI 10.1103/PhysRevLett.124.087701 · 2018-11-20 · Physical review letters

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Abstract

We propose a new type of optical transistor for a broadband amplification of THz radiation. It is made of a graphene--superconductor hybrid, where electrons and Cooper pairs couple by Coulomb forces. The transistor operates via the propagation of surface plasmons in both layers, and the origin of amplification is the quantum capacitance of graphene. It leads to THz waves amplification, the negative power absorption, and as a result, the system yields positive gain, and the hybrid acts like an optical transistor, operating with the terahertz light. It can, in principle, amplify even a whole spectrum of chaotic signals (or noise), that is required for numerous biological applications.

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