Novel method to study strain effect of thin films using a piezoelectric-based device and a flexible metallic substrate
Kazumasa Iida, Yuwa Sugimoto, Takafumi Hatano, Takahiro Urata, Marco Langer, Bernhard Holzapfel, Jens Hänisch, Hiroshi Ikuta
arXiv:1901.01478 · DOI 10.7567/1882-0786/aaf6e6 · 2019-01-06 · Applied Physics Express
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Abstract
For applying tensile or compressive uniaxial strain to functional thin films, we propose a novel approach in combining a piezoelectric-based device and a technical metallic substrate used widely in the 2nd generation coated conductors (i.e. superconducting tapes). A strain-induced shift of the superconducting transition temperature of 0.1 K for Co-doped BaFe2As2 was observed along [100] direction, corresponding to a uniaxial pressure derivative dTc/dp100=-4 K/GPa. For Mn3CuN, a uniaxial strain derivative along [100] direction of the Curie temperature dTC/de100=13 K/% was observed. The current approach is applicable to various functional thin films in a wide range of temperatures.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Ba(Fe0.92Co0.08)2As2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| La1.85Sr0.15CuO4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| BaFe1.8Co0.2As2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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