Full control of quantum Hall supercurrent in a side gated graphene Josephson junction

Andrew Seredinski; Anne W. Draelos; Ethan G. Arnault; Ming-Tso Wei; Hengming Li; Kenji Watanabe; Takashi Taniguchi; Francois Amet; Gleb Finkelstein

doi:10.1126/sciadv.aaw8693

Full control of quantum Hall supercurrent in a side gated graphene Josephson junction

Andrew Seredinski, Anne W. Draelos, Ethan G. Arnault, Ming-Tso Wei, Hengming Li, Kenji Watanabe, Takashi Taniguchi, Francois Amet, Gleb Finkelstein

arXiv:1901.05928 · DOI 10.1126/sciadv.aaw8693 · 2019-01-17 · Science Advances

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Abstract

We present a study of a graphene-based Josephson junction with dedicated side gates carved from the same sheet of graphene as the junction itself. These side gates are highly efficient, and allow us to modulate carrier density along either edge of the junction in a wide range. In particular, in magnetic fields in the $1-2$ Tesla range, we are able to populate the next Landau level, resulting in Hall plateaus with conductance that differs from the bulk filling factor. When counter-propagating quantum Hall edge states are introduced along either edge, we observe supercurrent localized along that edge of the junction. Here we study these supercurrents as a function of magnetic field and carrier density.