Effect of electron irradiation and Pr doping on the charge transport in YBCO single crystals

R. V. Vovk; G. Ya. Khadzhai; O. V. Dobrovolskiy

doi:10.1016/j.ssc.2018.07.005

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Effect of electron irradiation and Pr doping on the charge transport in YBCO single crystals

R. V. Vovk, G. Ya. Khadzhai, O. V. Dobrovolskiy

arXiv:1901.06194 · DOI 10.1016/j.ssc.2018.07.005 · 2019-01-18 · Solid State Communications

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Abstract

The influence of irradiation by electrons with energies of $0.5-2.5$\,MeV at temperatures of about $10$\,K on the basal-plane resistivity of the YBa$_2$Cu$_3$O$_{7-δ}$ single crystals is investigated in the range from $T_c$ to $300$\,K. The resistivity temperature dependence is determined by defects arising due to the irradiation. These defects directly affect the superconducting transition, decreasing $T_c$ and increasing the transition width without significant distortions of its shape. The resulting defects also lead to an increase in the Debye temperature due to a reduction of the anisotropy, and a noticeable increase in the scattering by phonons in the sample. The excess conductivity does not change with the irradiation used.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
YBa2Cu3O7-δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	91.74	Pressure not reported	unknown