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Charge carrier dynamics of FeSe thin film investigated by terahertz magneto-optical spectroscopy

Naotaka Yoshikawa, Masayuki Takayama, Naoki Shikama, Tomoya Ishikawa, Fuyuki Nabeshima, Atsutaka Maeda, Ryo Shimano

arXiv:1903.00897 · DOI 10.1103/PhysRevB.100.035110 · 2019-03-03 · Physical Review B

T1theoretical3 citations

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Abstract

We performed terahertz magneto-optical spectroscopy of FeSe thin film to elucidate the charge carrier dynamics. The measured diagonal (longitudinal) and off-diagonal (Hall) conductivity spectra are well reproduced by two-carrier Drude model, from which the carrier densities, scattering times and effective masses of electron and hole carriers are determined in a wide range of temperature. The hole density decreases below the structural transition temperature while electron density increases, which is attributed to the band structure modification in the electronic nematic phase. The scattering time of the hole carrier becomes substantially longer than that of the electron at lower temperature, which accounts for the increase of the positive dc Hall coefficient at low temperature.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
FeSe

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9Pressure unresolvedunknown
FeSe

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38Pressure not reportedunknown
FeSe

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109Pressure not reportedunknown
FeSe

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

48Pressure not reportedunknown
FeSe

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

3Pressure not reportedzero_resistance

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