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Niobium diselenide superconducting photodetectors

Gavin J. Orchin, Domenico De Fazio, Angelo Di Bernardo, Matthew Hamer, Duhee Yoon, Alisson R. Cadore, Ilya Goykhman, Kenji Watanabe, Takashi Taniguchi, Jason W. A. Robinson, Roman V. Gorbachev, Andrea C. Ferrari, Robert H. Hadfield

arXiv:1903.02528 · DOI 10.1063/1.5097389 · 2019-03-06 · Applied Physics Letters

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Abstract

We report the photoresponse of niobium diselenide (NbSe$_2$), a transition metal dichalcogenide (TMD) which exhibits superconducting properties down to a single layer. Devices are built by using micro-mechanically cleaved 2 to 10 layers and tested under current bias using nano-optical mapping in the 350mK-5K range, where they are found to be superconducting. The superconducting state can be broken by absorption of light, resulting in a voltage signal when the devices are current biased. The response found to be energy dependent making the devices useful for applications requiring energy resolution, such as bolometry, spectroscopy and infrared imaging.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
NbSe2

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7.2Pressure not reportedunknown
NbSe2

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2Pressure not reportedunknown
NbSe2

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5Pressure not reportedunknown
NbSe2

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6Pressure not reportedunknown

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