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Molecular beam epitaxy growth of superconducting Sr2RuO4 films

M. Uchida, M. Ide, H. Watanabe, K. S. Takahashi, Y. Tokura, M. Kawasaki

arXiv:1903.08629 · DOI 10.1063/1.5007342 · 2019-03-20 · APL Materials

T1theoretical30 citations

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Abstract

We report growth of superconducting Sr2RuO4 films by oxide molecular beam epitaxy (MBE). Careful tuning of the Ru flux with an electron beam evaporator enables us to optimize growth conditions including the Ru/Sr flux ratio and also to investigate stoichiometry effects on the structural and transport properties. The highest onset transition temperature of about 1.1 K is observed for films grown in a slightly Ru-rich flux condition in order to suppress Ru deficiency. The realization of superconducting Sr2RuO4 films via oxide MBE opens up a new route to study the unconventional superconductivity of this material.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Sr2RuO4

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1.1Pressure not reportedonset
Sr2RuO4

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0.8Pressure not reportedzero_resistance
Sr2RuO4

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1.5Pressure not reportedunknown
Sr2RuO4

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0.5Pressure not reportedzero_resistance
Sr2RuO4

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0.9Pressure not reportedonset

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