Control of dopant crystallinity in electrochemically treated cuprate thin films
Alex Frano, Martin Bluschke, Zhijun Xu, Benjamin Frandsen, Yi Lu, Ming Yi, Ronald Marks, Apurva Mehta, Valery Borzenets, Derek Meyers, Mark. P. M. Dean, Federico Baiutti, Joachim Maier, Gideok Kim, Georg Christiani, Gennady Logvenov, Eva Benckiser, Bernhard Keimer, Robert Birgeneau
arXiv:1907.01079 · DOI 10.1103/PhysRevMaterials.3.063803 · 2019-07-01 · Physical Review Materials
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Abstract
We present a methodology based on \textit{ex-situ} (post-growth) electrochemistry to control the oxygen concentration in thin films of the superconducting oxide La$_2$CuO$_{4+y}$ grown epitaxially on substrates of isostructural LaSrAlO$_4$. The superconducting transition temperature, which depends on the oxygen concentration, can be tuned by adjusting the pH level of the base solution used for the electrochemical reaction. As our main finding, we demonstrate that the dopant oxygens can either occupy the interstitial layer in an orientationally disordered state or organize into a crystalline phase via a mechanism in which dopant oxygens are inserted into the substrate, changing the lattice symmetry of both the substrate and the epitaxial film. We discuss this mechanism, and describe the resulting methodology as a platform to be explored in thin films of other transition metal oxides.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| La2CuO4+y Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure unresolved | unknown |
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