A cryogenic memory element based on an anomalous Josephson junction

C. Guarcello; F. S. Bergeret

doi:10.1103/PhysRevApplied.13.034012

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A cryogenic memory element based on an anomalous Josephson junction

C. Guarcello, F. S. Bergeret

arXiv:1907.08454 · DOI 10.1103/PhysRevApplied.13.034012 · 2019-07-19 · Physical Review Applied

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Abstract

We propose a non-volatile memory element based on a lateral ferromagnetic Josephson junction with spin-orbit coupling and out-of-plane magnetization. The interplay between the latter and the intrinsic exchange field of the ferromagnet leads to a magnetoelectric effect that couples the charge current through the junction and its magnetization, such that by applying a current pulse the direction of the magnetic moment in F can be switched. The two memory states are encoded in the direction of the out-of-plane magnetization. With the aim to determine the optimal working temperature for the memory element, we explore the noise-induced effects on the averaged stationary magnetization by taking into account thermal fluctuations affecting both the Josephson phase and the magnetic moment dynamics. We investigate the switching process as a function of intrinsic parameters of the ferromagnet, such as the Gilbert damping and strength of the spin-orbit coupling, and proposed a non-destructive readout scheme based on a dc-SQUID. Additionally, we analyze a way to protect the memory state from external perturbations by voltage gating in systems with a both linear-in-momentum Rashba and Dresselhaus spin-orbit coupling.