Disorder and Critical Current Variability in Josephson Junctions

Miguel Antonio Sulangi; T. A. Weingartner; N. Pokhrel; E. Patrick; M. Law; P. J. Hirschfeld

doi:10.1063/1.5125765

← Back to search

Disorder and Critical Current Variability in Josephson Junctions

Miguel Antonio Sulangi, T. A. Weingartner, N. Pokhrel, E. Patrick, M. Law, P. J. Hirschfeld

arXiv:1908.08360 · DOI 10.1063/1.5125765 · 2019-08-22 · Journal of Applied Physics

T37 citations

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

We investigate theoretically the origins of observed variations in the critical currents of Nb/Al-AlO$_x$/Nb Josephson junctions in terms of various types of disorder. We consider the following disorder sources: vacancies within the Al layer; thickness variations in the AlO$_x$ layer; and "pinholes" (i.e., point contacts) within the AlO$_x$ layer. The calculations are all performed by solving the microscopic Bogoliubov-de Gennes Hamiltonian self-consistently. It is found that a small concentration of vacancies within the Al layer is sufficient to suppress the critical current, while the presence of a small number of thick regions of the oxide layer induces a similar effect as well. The pinhole scenario is found to result in anomalous behavior that resembles neither that of a pure tunnel junction nor that of an SNS junction, but a regime that interpolates between these two limits. We comment on the degree to which each of the three scenarios describes the actual situation present in these junctions.