Number Parity effect in the normal state of $SrTiO_3$

Xing Yang; Quanhui Liu; Boldizsár Jankó

Number Parity effect in the normal state of $SrTiO_3$

Xing Yang, Quanhui Liu, Boldizsár Jankó

arXiv:2003.07479 · 2020-03-17

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Abstract

We study the recently discovered even-odd effects in the normal state of single-electron devices manufactured at strontium titanium oxide/lanthanum aluminum oxide interfaces (STO/LAO). Within the framework of the number parity-projected formalism and a phenomenological fermion-boson model we find that, in sharp contrast to conventional superconductors, the crossover temperature $T^*$ for the onset of number parity effect is considerably larger than the superconducting transition temperature $T_c$ due to the existence of a pairing gap above $T_c$. Furthermore, the finite lifetime of the preformed pairs reduces by several orders of magnitude the effective number of states $N_{\rm eff}$ available for the unpaired quasiparticle in the odd parity state of the Coulomb blockaded STO/LAO island. Our findings are in qualitative agreement with the experimental results reported by Levy and coworkers for STO/LAO based single electron devices.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	1	Pressure not reported	unknown