AC Measurement of the Nernst effect of thin films at low temperatures

Yuxiao Wu; Aviad Frydman; Arnab Roy

doi:10.1063/5.0007653

← Back to search

AC Measurement of the Nernst effect of thin films at low temperatures

Yuxiao Wu, Aviad Frydman, Arnab Roy

arXiv:2003.07946 · DOI 10.1063/5.0007653 · 2020-03-17

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

We describe an alternating current method to measure the Nernst effect in superconducting thin films at low temperatures. The Nernst effect is an important tool in the understanding superconducting fluctuations and, in particular, vortex motion near critical points. However, in most materials, the Nernst signal in a typical experimental setup rarely exceeds a few $μ$V, in some cases being as low as a few nV. DC measurements of such small signals require extensive signal processing and protection against stray pickups and offsets, limiting the sensitivity of such measurements to $>$5nV. Here we describe a method utilizing a one-heater-two-thermometer setup with the heating element and thermometers fabricated on-chip with the sample, which helped to reduce thermal load and temperature lag between the substrate and thermometer. Using AC heating power and 2$ω$ measurement, we are able to achieve sub-nanovolt sensitivity in 20-30nm MoGe thin films on glass substrate, compared to a sensitivity of $\sim$9nV using DC techniques on the same setup.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
MoGe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown