Enhancement of superconducting transition temperature in electrochemically etched FeSe/LaAlO$_3$ films
Naoki Shikama, Yuki Sakishita, Fuyuki Nabeshima, Yumiko Katayama, Kazunori Ueno, Atsutaka Maeda
arXiv:2005.06982 · DOI 10.35848/1882-0786/aba649 · 2020-05-14 · Applied Physics Express
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Abstract
In this study, we investigated the gate voltage dependence of $T_{\mathrm c}$ in electrochemically etched FeSe films with an electric-double layer transistor structure. The $T_{\mathrm c}^{\mathrm {zero}}$ value of the etched FeSe films with a lower gate voltage ($V_{\mathrm g}$ = 2.5 and 3.3 V) reaches 46 K, which is the highest value among almost all reported values from the resistivity measurements except for the data by Ge et al. This enhanced $T_{\mathrm c}$ remains unchanged even after the discharge process, unlike the results for electrostatic doping without an etching process. Our results suggest that the origin of the increase in $T_{\mathrm c}$ is not electrostatic doping but rather the electrochemical reaction at the surface of an etched films.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| FeSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 46 | Pressure not reported | zero_resistance |
| FeSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 50 | Pressure not reported | unknown |
| FeSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4 | Pressure not reported | unknown |
| FeSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 10 | Pressure not reported | unknown |
| FeSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 9 | Pressure not reported | unknown |
| FeSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 40 | Pressure not reported | unknown |
| FeSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 100 | Pressure not reported | unknown |
| FeSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 30 | Pressure not reported | unknown |
| FeSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 48 | Pressure not reported | unknown |
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