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Enhancement of superconducting transition temperature in electrochemically etched FeSe/LaAlO$_3$ films

Naoki Shikama, Yuki Sakishita, Fuyuki Nabeshima, Yumiko Katayama, Kazunori Ueno, Atsutaka Maeda

arXiv:2005.06982 · DOI 10.35848/1882-0786/aba649 · 2020-05-14 · Applied Physics Express

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Abstract

In this study, we investigated the gate voltage dependence of $T_{\mathrm c}$ in electrochemically etched FeSe films with an electric-double layer transistor structure. The $T_{\mathrm c}^{\mathrm {zero}}$ value of the etched FeSe films with a lower gate voltage ($V_{\mathrm g}$ = 2.5 and 3.3 V) reaches 46 K, which is the highest value among almost all reported values from the resistivity measurements except for the data by Ge et al. This enhanced $T_{\mathrm c}$ remains unchanged even after the discharge process, unlike the results for electrostatic doping without an etching process. Our results suggest that the origin of the increase in $T_{\mathrm c}$ is not electrostatic doping but rather the electrochemical reaction at the surface of an etched films.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
FeSe

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46Pressure not reportedzero_resistance
FeSe

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50Pressure not reportedunknown
FeSe

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4Pressure not reportedunknown
FeSe

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10Pressure not reportedunknown
FeSe

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9Pressure not reportedunknown
FeSe

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40Pressure not reportedunknown
FeSe

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

100Pressure not reportedunknown
FeSe

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30Pressure not reportedunknown
FeSe

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48Pressure not reportedunknown

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