Ferroelectric Exchange Bias Affects Interfacial Electronic States

Gal Tuvia; Yiftach Frenkel; Prasanna K. Rout; Itai Silber; Beena Kalisky; Yoram Dagan

doi:10.1002/adma.202000216

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Ferroelectric Exchange Bias Affects Interfacial Electronic States

Gal Tuvia, Yiftach Frenkel, Prasanna K. Rout, Itai Silber, Beena Kalisky, Yoram Dagan

arXiv:2007.01785 · DOI 10.1002/adma.202000216 · 2020-07-03

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Abstract

In polar oxide interfaces phenomena such as conductivity, superconductivity, magnetism, one-dimensional conductivity and Quantum Hall states can emerge at the polar discontinuity. Combining controllable ferroelectricity at such interfaces can affect the superconducting properties and shed light on the mutual effects between the polar oxide and the ferroelectric oxide. Here we study the interface between the polar oxide LaAlO3 and the ferroelectric Ca-doped SrTiO3 by means of electrical transport combined with local imaging of the current flow with the use of scanning Superconducting Quantum Interference Device (SQUID). Anomalous behavior of the interface resistivity is observed at low temperatures. The scanning SQUID maps of the current flow suggest that this behavior originates from an intrinsic bias induced by the polar LaAlO3 layer. Our data imply that the intrinsic bias combined with ferroelectricity constrain the possible structural domain tiling near the interface. We recommend the use of this intrinsic bias as a method of controlling and tuning the initial state of ferroelectric materials by design of the polar structure. The hysteretic dependence of the normal and the superconducting state properties on gate voltage can be utilized in multifaceted controllable memory devices.