Band insulator to Mott insulator transition in 1T-TaS$_2$

Y. D. Wang; W. L. Yao; Z. M. Xin; T. T. Han; Z. G. Wang; L. Chen; C. Cai; Yuan Li; Y. Zhang

doi:10.1038/s41467-020-18040-4

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Band insulator to Mott insulator transition in 1T-TaS$_2$

Y. D. Wang, W. L. Yao, Z. M. Xin, T. T. Han, Z. G. Wang, L. Chen, C. Cai, Yuan Li, Y. Zhang

arXiv:2008.11001 · DOI 10.1038/s41467-020-18040-4 · 2020-08-25 · Nature Communications

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Abstract

1T-TaS$_2$ undergoes successive phase transitions upon cooling and eventually enters an insulating state of mysterious origin. Some consider this state to be a band insulator with interlayer stacking order, yet others attribute it to Mott physics that support a quantum spin liquid state.Here, we determine the electronic and structural properties of 1T-TaS$_2$ using angle-resolved photoemission spectroscopy and X-Ray diffraction. At low temperatures, the 2$π$/2c-periodic band dispersion, along with half-integer-indexed diffraction peaks along the c axis, unambiguously indicates that the ground state of 1T-TaS$_2$ is a band insulator with interlayer dimerization. Upon heating, however, the system undergoes a transition into a Mott insulating state, which only exists in a narrow temperature window. Our results refute the idea of searching for quantum magnetism in 1T-TaS$_2$ only at low temperatures, and highlight the competition between on-site Coulomb repulsion and interlayer hopping as a crucial aspect for understanding the material's electronic properties.