Quantum criticality and multiple crossing points in the magnetoresistance of thin TiN-films
K. Kronfeldner, T. I. Baturina, C. Strunk
arXiv:2009.01316 · DOI 10.1103/PhysRevB.103.184512 · 2020-09-02 · Physical Review B
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Abstract
We have measured $R(T,B)$ of a TiN thin-film very close to the disorder-driven superconductor-insulator transition but still superconducting at zero field and low temperatures. In a magnetic field we find three distinct crossing point of the magnetoresistance isotherms occur at magnetic fields $B_{cX}$ in three different temperature regions. Each crossing point in $R(T,B)$ corresponds to a plateau in $R(T,B_{cX})$. We systematically study the evolution of these crossing point near the disorder-induced superconductor/insulator transition, identify the most promising candidate for a quantum phase transition, and provide estimates for the two critical exponents $z$ and $ν$.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| TiN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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