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Superconducting Transition Temperature Modulation in NbN via EDL Gating

Erik Piatti, Alessandro Sola, Dario Daghero, Giovanni A. Ummarino, Francesco Laviano, Jijeesh R. Nair, Claudio Gerbaldi, Roberto Cristiano, Alessandro Casaburi, Renato S. Gonnelli

arXiv:2011.12132 · DOI 10.1007/s10948-015-3306-0 · 2020-11-24 · Journal of Superconductivity and Novel Magnetism

T1theoretical21 citations

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Abstract

We perform electric double-layer gating experiments on thin films of niobium nitride. Thanks to a cross-linked polymer electrolyte system of improved efficiency, we induce surface charge densities as high as $\approx 2.8 \times 10^{15}\,\mathrm{cm}^{-2}$ in the active channel of the devices. We report a reversible modulation of the superconducting transition temperature (either positive or negative depending on the sign of the gate voltage) whose magnitude and sign are incompatible with the confinement of the perturbed superconducting state to a thin surface layer, as would be expected within a naïve screening model.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
NbN

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14.91Pressure not reportedonset
NbN

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

14.99Pressure not reportedzero_resistance
SrTiO3

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—Pressure not reportedunknown
ZrNCl

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—Pressure not reportedunknown
MoS2

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—Pressure not reportedunknown

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