Atomic Layer Deposition of Aluminum (111) Thin Film by Dimethylethylaminealane Precursor

Sameh Okasha; Yoshiaki Sekine; Satoshi Sasaki; Yuichi Harada

Atomic Layer Deposition of Aluminum (111) Thin Film by Dimethylethylaminealane Precursor

Sameh Okasha, Yoshiaki Sekine, Satoshi Sasaki, Yuichi Harada

arXiv:2101.04366 · 2021-01-12

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Abstract

We report the growth of aluminum (111) thin film by atomic layer deposition (ALD) technique with dimethylethylaminealane (DMEAA) as a precursor. It is found that the metallic underlayer is essential to grow uniform aluminum films by DMEAA precursor. As a titanium thin film is used as the underlayer, grown aluminum thin film shows (111) orientation irrespective of substrates. The lattice constant and superconducting transition temperature of the aluminum thin films are the same as the bulk one. These findings suggest that ALD technique provides high quality of the aluminum thin films and have potential for the applications of superconducting devices. We discuss ALD technique with DMEAA precursor is the promising method for fabricating vertical small Josephson tunnel junctions, which can be used as the superconducting quantum bits.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown