Superconducting contacts to a monolayer semiconductor

M. Ramezani; I. Correa Sampaio; K. Watanabe; T. Taniguchi; C. Schönenberger; A. Baumgartner

doi:10.1021/acs.nanolett.1c00615

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Superconducting contacts to a monolayer semiconductor

M. Ramezani, I. Correa Sampaio, K. Watanabe, T. Taniguchi, C. Schönenberger, A. Baumgartner

arXiv:2102.06227 · DOI 10.1021/acs.nanolett.1c00615 · 2021-02-11 · Nano Letters

T3experimental19 citations

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Abstract

We demonstrate superconducting vertical interconnect access (VIA) contacts to a monolayer of molybdenum disulfide (MoS$_2$), a layered semiconductor with highly relevant electronic and optical properties. As a contact material we use MoRe, a superconductor with a high critical magnetic field and high critical temperature. The electron transport is mostly dominated by a single superconductor/normal conductor junction with a clear superconductor gap. In addition, we find MoS$_2$ regions that are strongly coupled to the superconductor, resulting in resonant Andreev tunneling and junction dependent gap characteristics, suggesting a superconducting proximity effect. Magnetoresistance measurements show that the bandstructure and the high intrinsic carrier mobility remain intact in the bulk of the MoS$_2$. This type of VIA contact is applicable to a large variety of layered materials and superconducting contacts, opening up a path to monolayer semiconductors as a platform for superconducting hybrid devices.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
MoRe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown